| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light emitting device having an active layer of quantum well structure containing In in which thermal damage due to growth temperature of a semiconductor layer being grown up after the active layer can be suppressed, and the luminescence and electrical characteristics are enhanced while raising intake of In. <P>SOLUTION: On a sapphire substrate 1, an n-type GaN contact layer 2, an n-type AlInGaN/AlGaN super lattice layer 3, an active layer 4, a p-type AlGaN block layer 8, and a p-type GaN contact layer 5 are formed, and an n-type electrode 7 and a p-type electrode 6 are provided. The active layer 4 has a quantum well structure where a well layer is composed of Al<SB>X1</SB>In<SB>Y1</SB>Ga<SB>Z1</SB>N (X1+Y1+Z1=1, 0<X1<1, 0<Y1<1), a barrier layer is composed of Al<SB>X2</SB>In<SB>Y2</SB>Ga<SB>Z2</SB>N (X2+Y2+Z2=1, 0≤X2<1, 0≤Y2<1, Y1>Y2), and the well layer and the barrier layer are formed by temperature modulation. <P>COPYRIGHT: (C)2008,JPO&INPIT |
