发明名称 PIEZOELECTRIC THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film device in which membrane part damage can be suppressed, a distance between the membrane part and through electrodes can be shortened and airtightness is easily ensured, and to provide its manufacturing method. <P>SOLUTION: The piezoelectric thin film device and its manufacturing method comprise: a step for forming through electrodes (30) in a substrate (10), and a step for forming a membrane part (20) on the surface of the substrate (10), which is connected to the through electrodes 30, wherein a lower electrode (22) faces an upper electrode (26) across a piezoelectric film (24) after the step for forming the through electrodes (30). <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008118480(A) 申请公布日期 2008.05.22
申请号 JP20060300949 申请日期 2006.11.06
申请人 FUJITSU MEDIA DEVICE KK;FUJITSU LTD 发明人 YOKOYAMA TAKESHI;UEDA MASANORI;EBARA NAGANORI
分类号 H03H3/02;H01L41/09;H01L41/12;H03H9/17 主分类号 H03H3/02
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