| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having three-dimensionally arranged memory cells including pn-junction diodes having fine rectification characteristics, and to provide a manufacturing method for the semiconductor memory device. <P>SOLUTION: The semiconductor memory device includes a plurality of constituent elements arranged in the three-dimensional direction, each constituent element having first interconnections 205 and 223 extending in one direction, a second interconnection 214 extending in the direction crossing the first interconnection 205, and the memory cells 230 and 231 which are disposed between the first interconnections 205 and 223 and the second interconnection 214 at the intersections between the first interconnections 205 and 223 and the second interconnection 214. Each of the memory cells 230 and 231 is composed of the pn-junction diode and a memory element connected to each other in such a way that the pn-junction diode is disposed closer to the second interconnection 205 used for selection of either of the memory cells 230 and 231 and that p-type semiconductors 211 and 213 composing the pn-junction diode constitutes part of the second interconnection 214. <P>COPYRIGHT: (C)2008,JPO&INPIT |
