| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting laser device and a surface emitting laser array, along with a method for manufacturing the device and array with a high yield, of which light emission in a light emitting region is uniform. SOLUTION: In the method of manufacturing a light emitting laser device, a conductive GaN substrate 10 comprising a high dislocation density high conductive region 10a, a low dislocation density high conductive region 10b, and a low dislocation density low conductive region 10c is prepared. It includes steps in which a plurality of group III-V compound semiconductor layers 20 containing a light emission layer 200 are formed on one main surface 10m of the substrate, on which a semiconductor layer side electrode 15 is formed, and a substrate side electrode is formed on the other main surface 10n of the conductive GaN substrate. Here, a carrier diffusion layer 201 is formed between the conductive GaN substrate 10 and the light emission layer 200, and a light emission region 200a, in which a carrier flows in the light emission layer 200, is so formed as to be limited to the upper part in the low dislocation density high conductive region 10b and the low dislocation density low conductive region 10c. COPYRIGHT: (C)2008,JPO&INPIT
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