| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that enables to avoid troubles such as substrate breakage in a post-step and intrusion of chemicals while allowing excellent junction between a semiconductor substrate and a transparent substrate even if an edge bead occurs when joining the semiconductor substrate with the transparent substrate via adhesive layers. SOLUTION: The semiconductor device manufacturing method is used for manufacturing a semiconductor device composed by joining the semiconductor substrate with the transparent substrate via adhesive layers. The method is successively provided with the following steps, that is, a step for forming a first adhesive layer by spin-coating a first adhesive resin on one face of the semiconductor substrate, a step for exposing a part of the outer peripheral part and a prescribed portion in the semiconductor substrate by partially removing the first adhesive layer, a step for forming a second adhesive layer only on the exposed parts in the outer peripheral part by spin-coating a second adhesive resin on the semiconductor substrate, and a step for joining the semiconductor substrate and the transparent substrate with each other while pressurizing them after arranging the transparent substrate on the semiconductor substrate via the first/second adhesive layers. COPYRIGHT: (C)2008,JPO&INPIT
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