| 发明名称 |
Semiconductor device and method for manufacturing the same |
| 摘要 |
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.
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| 申请公布号 |
US2008116526(A1) |
申请公布日期 |
2008.05.22 |
| 申请号 |
US20080007496 |
申请日期 |
2008.01.11 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
AMISHIRO HIROYUKI;KUMAMOTO TOSHIO;IGARASHI MOTOSHIGE;YAMAGUCHI KENJI |
| 分类号 |
H01L21/28;H01L27/06;H01L21/02;H01L21/3205;H01L21/822;H01L23/52;H01L27/04;H01L27/08;H01L29/423;H01L29/43;H01L29/49 |
主分类号 |
H01L21/28 |
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