| 摘要 |
An exemplary method for manufacturing a thin film transistor includes: forming at least two photo-resist layers on a substrate, a developing speed of an upper one of the photo-resist layers being less than that of each photo-resist layer below said upper one of the photo-resist layers; exposing and developing the photo-resist layers, thereby forming residual photo-resist layers having a reduced width from top to bottom; subsequently depositing a plurality of metal layers on the substrate having the residual photo-resist layers; removing the residual photo-resist layers and the metal layers deposited on the photo-resist layers, thereby forming a gate electrode which includes residual metal layers and which has an increased width from top to bottom; forming a gate insulation layer on the substrate having the gate electrode; forming a semiconductor layer on the gate insulation layer; and forming a source electrode and a drain electrode on the semiconductor layer.
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