| 摘要 |
When the size of a substrate 1 is instructed, a map of uniform sputter-etching possible region based on the relationship between the diameter-size Dp of a high-density plasma region and the height H from the center of the high-density plasma region to the bottom of a plasma diffusion region is read out; on the basis of the internal pressure and the frequency of electromagnetic waves from an antenna 116 , the value of the height Hp from the center of the high-density plasma region to the upper surface inside a vacuum chamber 111 , and the value of the Dp are obtained; on the basis of the internal pressure and the magnitude of the self-bias potential of the substrate 1 , the height Hs between the bottom of the plasma diffusion region and the top surface of a supporting table 113 is obtained; on the basis of the above-mentioned values of Dp, Hp and Hs, the value of the H in the uniform sputter-etching possible region is obtained from the map; and a lifting-and-lowering device 121 is controlled so that H can have the above-mentioned value.
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