发明名称 |
PRODUCTION METHOD FOR COMPOSITE OXIDE THIN FILM AND DEVICE THEREFOR AND COMPOSITE OXIDE FILM PRODUCED THEREBY |
摘要 |
A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing., as well as a composite oxide thin film thereby, especially a Cu group high temperature superconducting thin film, are disclosed. A thin Cu group high temperature superconducting film, which is constituted of a charge supply block (1) and a superconducting block (2), is formed on a substrate by alternately sputtering from a sputtering target having a composition of the charge supply block (1) and a sputtering target having a composition of the superconducting block (2) and repeating such an alternate sputtering operation a number of times needed for the film to reach a desired thickness. The first sputtering target for the charge supply block has a charge supply block composition in which Cu atoms are partly substituted with atoms of an element having a structure stabilizing effect. <IMAGE> |
申请公布号 |
EP1342820(A4) |
申请公布日期 |
2008.05.21 |
申请号 |
EP20010958485 |
申请日期 |
2001.08.24 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
IHARA, HIDEO;ATHINARAYANAN, SUNDARESAN;NIE, JIACAI |
分类号 |
C30B29/22;H01L39/24;C01G3/00;C04B35/45;C23C14/08;C30B23/02;G11B5/65;G11B11/105;H01B13/00;H01L39/12 |
主分类号 |
C30B29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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