SEMICONDUTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor device and a method of fabricating the same are provided to prevent diffusion of fluorine to an interface of an interlayer dielectric and a semiconductor substrate by forming a spacer on a sidewall of a recessed part, whose upper side makes a tight contact with the interlayer dielectric, thereby preventing formation of tungsten nitride on the interface. A method of fabricating a semiconductor device comprises the steps of: forming an interlayer dielectric(102) on a semiconductor substrate(100); forming a contact hole(104) that exposes a surface of the semiconductor substrate on the interlayer dielectric; forming a recessed part(104a) formed by an extension of the contact hole; and forming a spacer(106a) which exposes a bottom of the recessed part on a sidewall of the recessed part, by forming an oxide layer in the recessed part and anisotropically etching the oxide layer, wherein the contact hole and recessed part are filled with a conductive material which contains a barrier metal and tungsten on the barrier metal.