| 摘要 |
<p>The inductance element according to the present invention includes: an inductance section, provided above a semiconductor substrate via insulating films, which is composed of a conductive film pattern setted to have a predetermined inductance value; and an impurity region, provided on the semiconductor substrate so as to be positioned at least at an area under the conductive film pattern, which has a grounding potential and a denser impurity than that of the semiconductor substrate. The inductance element is provided in a semiconductor device. <IMAGE></p> |
