PHOTORESIST COMPOSITION USEFUL FOR IMMERSION LITHOGRAPHY

摘要

A photoresist composition is provided to prevent pattern collapse, and to control immersion defects effectively by inhibiting the dissolution of photoresist composition components due to water in an immersion lithography technology. A photoresist composition includes 1-30wt% of a photoresist polymer, 50-98wt% of an organic solvent mixture containing a fluorinated organic solvent, and 1-20wt% of a photoacid generator. The fluorinated organic solvent is contained in an amount 1-70wt%, based on the total organic solvent mixture. A method for forming a photoresist pattern includes the steps of: (a) coating the upside of a non-etching layer with the photoresist composition to form a photoresist film; (b) exposing the photoresist film with a predetermined pattern to a light; (c) heating the exposed photoresist film; and (d) developing the heated photoresist film to obtain a desired pattern.