发明名称 |
Connection structure for e.g. vertical FET, has electrode connected with connecting structure of potential, another electrode connected with connecting structure of another potential, and trenches running on edge area |
摘要 |
<p>The connection structure has electrodes arranged in the same electrode level and correspond to a main surface of a substrate of an electronic component (100) e.g. vertical FET. One of the electrodes is provided at an edge area-sided end of a trench (130) and extends beyond the other electrode at an edge area-sided end of another trench (230). The former electrode is connected with a connecting structure (110) of a potential, and the latter electrode is connected with a connecting structure (210) of another potential. The trenches run on an edge area.</p> |
申请公布号 |
DE102006056809(B3) |
申请公布日期 |
2008.05.21 |
申请号 |
DE20061056809 |
申请日期 |
2006.12.01 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
ZUNDEL, MARKUS;HIRLER, FRANZ |
分类号 |
H01L29/417;H01L29/78 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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