| 摘要 |
<p>A high-integrated flash memory device and a manufacturing method thereof are provided to improve the performance of a cell device by forming a charge storage node for storing charges on a lower portion of a control electrode. A fence-type body(210) is protrudes on a semiconductor substrate, and an isolation insulating layer(220) is formed between the fence-shaped bodies to electrically isolate elements formed on the body. The isolation insulating layer is etched to form an interlayer dielectric on an upper surface and sidewall of the body. A control electrode(240) is formed on the interlayer dielectric in a direction perpendicular to the body. The interlayer dielectric has a tunneling insulation layer(230) formed on the sidewall and the upper surface of the body, a charge storage node(260) formed on the tunneling insulating layer, and a control insulation layer(270) formed on the charge storage node.</p> |
