| 摘要 |
This invention provides a method for the formation of a highly dielectric film on a silicon substrate, comprising the steps of treating the surface of the silicon substrate with dilute hydrofluoric acid, feeding, after the dilute hydrofluoric acid treatment step, an organometal material containing Hf and nitrogen onto the surface of the silicon substrate to form nuclei of HfN, feeding, after the nucleation step, an Hf-containing organometal material and an Si-containing organic material onto the surface of the silicon substrate to form an Hf silicate film by CVD.
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