| 摘要 |
A resist stripper composition is provided to easily remove resist deformed and/or hardened during a high-temperature treatment and dry etching process, at low temperature within a relatively short time. A resist stripper composition includes (a) an alkylene carbonate and (b) a secondary, tertiary, or quaternary amine represented by the following formula 1 or 2. In the formula 1, each of R1, R2, and R3 is hydrogen, C1-10 alkyl, C1-10 hydroxyalkyl, carboxyl, -R4NR5R6, or -NR5R6(wherein, R4 is a C1-10 substituted or unsubstituted alkylene, and each of R5 and R6 is a hydrogen, C1-10 alkyl, C1-10 hydroxyalkyl, or carboxyl group), and R1 and R2, R1 and R3, or R2 and R3 are bonded to each other to form a ring. In the formula 2, each of R1 and R2 is hydrogen, C1-10 alkyl, C1-10 hydroxyalkyl, carboxyl, -R3NR4R5, or -NR4R5(wherein, R3 is C1-10 substituted or unsubstituted alkyl, and each of R4 and R5 is a hydrogen, C1-10 alkyl, C1-10 hydroxyalkyl, or carboxyl group).
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