发明名称 |
A built-in self-repairable memory |
摘要 |
<p>The present invention provides a built-in self-repairable memory. The invention repairs the faulty IC through hard fuses, as well as through available redundancy in memories on chip. As the faults are not present in all the memories, the invention uses lesser number of fuses to actually make a perfect repair and thus result into a yield enhancement. The fuse data is stored in a compressed form and then decompressed at the power on. The fuse data interface with the memory to be repaired is serial. The serial links decreases the routing congestion and hence gain in area as well as gain in yield (due to lesser defects and reduced area).
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申请公布号 |
EP1742229(A3) |
申请公布日期 |
2008.05.21 |
申请号 |
EP20060115639 |
申请日期 |
2006.06.19 |
申请人 |
STMICROELECTRONICS PVT. LTD |
发明人 |
DUBEY, PRASHANT;KASHYAP, AMIT |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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