发明名称 |
Method of manufacturing a mixed microtechnology structure and structure obtained using same |
摘要 |
<p>The method involves forming a temporary substrate having a mixed layer (15) adjacent to a sacrificial layer (2) and contact studs (1A, 1B) of different materials, where the sacrificial layer is made of nitride and stud (1B) is made of silicon dioxide. The sacrificial layer is removed to expose a mixed surface of the mixed layer, where the surface has portions of the studs. A continuous covering layer is formed on the surface by direct bonding, where the continuous layer and one of the studs contain different doping. A planarization layer made of polycrystalline is formed on the surface. An independent claim is also included for a mixed micro-technological structure comprising a support substrate.</p> |
申请公布号 |
EP1923912(A1) |
申请公布日期 |
2008.05.21 |
申请号 |
EP20070291102 |
申请日期 |
2007.09.14 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
KOSTRZEWA, MAREK;MORICEAU, HUBERT;ZUSSY, MARC |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|