发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 A semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device are provided to increase gas capacity by increasing pressure in gas stored in a gas storage portion. A semiconductor manufacturing apparatus includes a reaction chamber(20), a discharge pipe(40), a vacuum discharge unit, a discharge valve, a first supply pipe(41), a second supply pipe(38), a first supply valve(22), a second supply valve(23), and a controller. The reaction chamber receives a substrate. The discharge pipe discharges gases in the reaction chamber. The vacuum discharge unit discharges gases in the reaction chamber through the discharge pipe. The discharge valve opens/closes the discharge pipe. The first supply pipe supplies a first kind of gas to the reaction chamber. The second supply pipe supplies a second kind of gas to the reaction chamber. The first supply valve opens/closes the first supply pipe. The second supply valve opens/closes the second supply pipe. The controller controls the discharge valve, the first supply valve, and the second supply valve.
申请公布号 KR20080044823(A) 申请公布日期 2008.05.21
申请号 KR20080043044 申请日期 2008.05.08
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 OKUDA KAZUYUKI;YAGI YASUSHI;KAGAYA TORU;SAKAI MASANORI
分类号 H01L21/203;C23C16/34;C23C16/44;C23C16/455 主分类号 H01L21/203
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