| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having a high processing speed and high uniformity. <P>SOLUTION: First inlets 61<SB>1</SB>to 61<SB>4</SB>each for discharging first gas for a plasma are provided in a discharge space formed of first and second discharge electrodes 71, 72<SB>1</SB>to 72<SB>4</SB>, and second inlets 62<SB>1</SB>to 62<SB>3</SB>each for discharging second gas having reactivity are provided at positions between the discharge space and an object 8 to be processed. The surface of the object 8 to be processed is irradiated with the plasma from the discharge space. When the second gas is blown from the second inlets 62<SB>1</SB>to 62<SB>3</SB>, a chemical reaction is advanced on the surface or near the surface of the object 8 to be processed, and oxidizing, nitriding, etching or plasma processing of a film formation, etc. can be performed at a high speed. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
