发明名称
摘要 It is intended to prevent a crack from occurring in a circuit region during dicing, while preventing oxidation and corrosion of a seal ring including a layer of copper as the uppermost layer thereof. A passivation film (120) has an opening (123) formed therein, The opening (123) is formed so as to reach an interlayer insulating film (109) and disposed so as to surround a periphery of a seal ring (110). As a result, a top face of a second interconnect layer (114) is completely covered by the passivation film (120), and is not exposed to an ambient air. Hence, it is possible to prevent an effect of protecting a semiconductor device achieved by the seal ring (110) from being reduced due to oxidation and corrosion of the second interconnect layer (114). Further, provision of the opening (123) does not allow a stress generated at a time of cutting a dicing region during dicing to easily propagate to a portion of the passivation film (120) present on the circuit region. This prevents occurrence of a crack in the circuit region.
申请公布号 JP4088120(B2) 申请公布日期 2008.05.21
申请号 JP20020234387 申请日期 2002.08.12
申请人 发明人
分类号 H01L21/3205;H01L23/52;H01L21/78;H01L23/00;H01L23/31 主分类号 H01L21/3205
代理机构 代理人
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