VERFAHREN ZUR HERSTELLUNG EINES EINKRISTALLSILIZIUMKARBIDS

摘要

For growth of a silicon carbide single crystal by transport of a silicon carbide-forming gas over a silicon carbide seed crystal plate (11), the seed crystal used is machined by electrolytic in-process dressing grinding. By using a seed crystal with low machining damage and low machining deformation, it is possible to grow a silicon carbide single crystal with minimal defects such as micropipes, and thus reduce the cost of manufacture of semiconductor devices.