| 摘要 |
<p>A method for manufacturing a thin film semiconductor device is provided to increase the performance using a crystalline silicon thin film formed on a substrate. A silicon thin film having a crystalline structure is formed on a substrate by using a plasma CVD method. Silane gas expressed by SinH2n+2(n=1,2,3,...) and halide germanium gas are used as a source gas. The halide germanium gas is at least one of GeF2, GeF4, and GeCl4. A silicon thin film containing activated dopant is formed by using a dopant gas as the source gas. Gas containing n-type or p-type impurity is used as the dopant gas. The silicon thin film is formed by heating the substrate.</p> |
