| 摘要 |
<p>A phase change memory device and a method for manufacturing the same are provided to preventing lifting phenomenon by forming a conducting pattern on an insulation layer by the same material as that of a heater. A phase change memory device includes a semiconductor substrate(110), a lower electrode(130), an insulation layer(140), a heater(150), a conductive pattern(160), and a upper electrode(180). The semiconductor substrate has a plurality of phase change cell regions. The lower electrode is formed on each of phase change cell regions on the semiconductor substrate. The insulation layer is formed on the substrate to cover the lower electrode, and has a contact hole exposing the lower electrode. The heater is installed in the contact hole. The conductive pattern is formed on the insulation layer to be spaced apart from the heater. The phase change layer is formed on the heater, the conductive pattern, an insulation layer part between the heater and the conductive pattern. The upper electrode is formed on the phase change layer.</p> |
