| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to manufacture the semiconductor device as the low cost by inserting a silicon layer between a pair of conductive layers. A semiconductor device has a memory device. The memory device includes a first electrode(11), a sidewall insulation layer(12), a silicon layer(13), and a second electrode(14). The first electrode is formed on a substrate having an insulation surface. The sidewall insulation layer is formed in a side of the first electrode. The silicon layer is formed on the first electrode and the sidewall insulation layer. The second electrode is formed on the first electrode to interpose the silicon layer. When a voltage is applied to the memory device, it is changed from a first state to a second state. Resistance between the first electrode and the second electrode is greater in the first state than in the second state.
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