| 摘要 |
The present invention discloses a method of forming a mask including: providing a substrate; forming a multilayer mirror for EUV light over the substrate; forming a leaky absorber for the EUV light over the multilayer mirror; and patterning the leaky absorber into a first region that is strongly reflective and a second region that is weakly reflective. The present invention further discloses an EUV mask including: a substrate; a multilayer mirror located over the substrate, the multilayer mirror having a first region and a second region; and a leaky absorber located over the second region of the multiplayer mirror, the leaky absorber shifting phase of incident light by 180 degrees. |
