| 摘要 |
<p>A flash memory device and a manufacturing method thereof are provided to prevent the damage of an ONO layer of a stack-type flash device using a hard mask pattern by finally forming an ONO pattern. A tunnel oxide layer pattern(120) is formed on a substrate(110), and a floating gate(130) is formed on the tunnel oxide layer pattern. A control gate(150) is formed on the floating gate. An ONO(Oxide/Nitride/Oxide) pattern(140) is formed between the floating gate and the control gate, and has a side protruding relative to sides(135,155) of the floating gate and control gate. A hard mask pattern(160) is formed on the control gate, and has a side protruding relative to the sides of the floating gate and control gate.</p> |
