发明名称 |
Method for fabricating metal interconnection line with use of barrier metal layer formed in low temperature |
摘要 |
The present invention relates to a method for fabricating a metal interconnection line with use of a barrier metal layer formed in a low temperature. The method includes the steps of: forming an inter-layer insulation layer on a substrate; etching predetermined regions of the inter-layer insulation layer to form a plurality of contact openings; forming an ohmic metal layer on the contact openings and the etched inter-layer insulation layer; forming a seed layer on the ohmic metal layer; forming a metal layer on the seed layer and nitriding the metal layer in a repeated number of times to form a barrier metal layer; and forming a metal interconnection line on the barrier metal layer by burying the contact openings.
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申请公布号 |
US7375024(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20040029758 |
申请日期 |
2004.12.22 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK CHANG-SOO |
分类号 |
H01L21/28;H01L21/4763;H01L21/285;H01L21/3205;H01L21/768;H01L23/52 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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