发明名称 |
Electrolytic copper plating method, phosphorus-containing anode for electrolytic copper plating, and semiconductor wafer plated using them and having few particles adhering to it |
摘要 |
The present invention pertains to an electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1500 mum (or more) to 20000 mum in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.
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申请公布号 |
US7374651(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20030478750 |
申请日期 |
2003.11.24 |
申请人 |
NIPPON MINING & METALS CO., LTD. |
发明人 |
AIBA AKIHIRO;OKABE TAKEO |
分类号 |
C25D5/00;C25D7/12;C22C9/00;C25D3/38;C25D17/10;H01L21/288 |
主分类号 |
C25D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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