发明名称 |
Gate structures having sidewall spacers formed using selective deposition |
摘要 |
Sidewall spacers are disclosed that extend on opposing sidewalls of gate stacks. The sidewall spacers have improved profiles to suppress or eliminate void formation between the gate stacks during gap-filling A gate dielectric layer is formed on a semiconductor substrate. Then, a gate stack 24 having a sidewall is formed over the gate dielectric layer. The gate stack 24 comprises a conductive layer 28 and a hard mask 30 overlying the conductive layer 28 . A liner 32 is selectively deposited over the gate stack 24 such that the liner 32 is deposited on the hard mask 30 at a rate lower than the rate of deposition on the conductive layer 28 . Thus, the liner 32 is substantially thinner on the hard mask 30 than on the conductive layer 28 . A nitride spacer is formed over 34 the liner 32 . A PMD layer is formed over the resultant structure, filling the gaps between adjacent gate stacks.
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申请公布号 |
US7375392(B1) |
申请公布日期 |
2008.05.20 |
申请号 |
US20060395818 |
申请日期 |
2006.03.30 |
申请人 |
INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
CHEN CHIH-HSIANG;LO GUO-QIANG;LEE SHIH-KED |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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