发明名称 |
Two-wavelength semiconductor laser device and method of manufacturing the same |
摘要 |
A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second region and has the same layers as those of the first semiconductor laser diode. A second semiconductor laser diode is formed on the non-active layer. A lateral conductive region is formed at least between the first and second semiconductor laser diodes.
|
申请公布号 |
US7374959(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20060439128 |
申请日期 |
2006.05.24 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KOH CHONG MANN |
分类号 |
H01L21/00;H01S5/40;H01L31/109;H01S3/10;H01S3/13;H01S5/00;H01S5/30 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|