发明名称 Two-wavelength semiconductor laser device and method of manufacturing the same
摘要 A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second region and has the same layers as those of the first semiconductor laser diode. A second semiconductor laser diode is formed on the non-active layer. A lateral conductive region is formed at least between the first and second semiconductor laser diodes.
申请公布号 US7374959(B2) 申请公布日期 2008.05.20
申请号 US20060439128 申请日期 2006.05.24
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KOH CHONG MANN
分类号 H01L21/00;H01S5/40;H01L31/109;H01S3/10;H01S3/13;H01S5/00;H01S5/30 主分类号 H01L21/00
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