发明名称 Semiconductor integrated circuit and semiconductor integrated circuit manufacturing method
摘要 An SOI structure semiconductor integrated circuit is disclosed that reduces the number of power supply wires setting substrate potential of a semiconductor element and reduces power consumption. With an SOI structure semiconductor integrated circuit, a first circuit block 51 does not include a critical path and a second circuit block 61 does include a critical path. First power supply wiring 28 supplies a first power supply and second power supply wiring 29 supplies a second power supply of a high-voltage compared to the first power supply. A wiring section 71 (P-channel first substrate power supply wiring and P-channel first power supply wiring) supplies the first power supply as a substrate power supply for P-channel elements of the first circuit block 51 and a source power supply. A wiring section 91 (P-channel second substrate power supply wiring) supplies the first power supply as a substrate power supply for P-channel elements of a second circuit block 61 , and a wiring section 81 (P-channel second power supply wiring) supplies the second power supply as a source power supply for P-channel elements of the second circuit block 61.
申请公布号 US7375547(B2) 申请公布日期 2008.05.20
申请号 US20060364345 申请日期 2006.03.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SHIMURA HIDEKICHI
分类号 H03K17/16;H03K19/003 主分类号 H03K17/16
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