发明名称 |
Method for improved metrology by protecting photoresist profiles |
摘要 |
A method for preserving semiconductor feature opening profiles for metrology examination including providing semiconductor wafer having a process surface comprising semiconductor feature openings; blanket depositing over the semiconductor feature openings to substantially fill the semiconductor feature openings at least one layer of material comprising silicon oxide; and, preparing a portion of the semiconductor wafer in cross sectional layout for metrology examination.
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申请公布号 |
US7374956(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20020202956 |
申请日期 |
2002.07.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD |
发明人 |
LU SHYEU SHENG;CHU HONG YUAN;CHEN KUEI SHUN;LIN HUA TAI |
分类号 |
G01R31/26;H01L23/544 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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