| 摘要 |
A semiconductor device includes a substrate including a high-voltage transistor area provided with a high-voltage transistor and a low-voltage transistor area provided with a low-voltage transistor; a LOCOS layer provided as a device isolation layer of the high-voltage transistor area; and a shallow-trench isolation layer provided as a device isolation layer of the low-voltage transistor area. Accordingly, a sufficient breakdown voltage level can be provided in a high-voltage transistor area, on-resistance and leakage current can be enhanced, and the chip area in a low-voltage transistor area can be reduced.
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