发明名称 MEMS pressure sensing device
摘要 A pressure sensing system formed in a monolithic semiconductor substrate. The pressure sensing system comprises a pressure sensing device formed on the monolithic semiconductor substrate. The pressure sensing device is adapted to be disposed in an environment for developing an electrical pressure signal corresponding to the pressure in the environment. The system includes driver circuitry formed in the monolithic semiconductor substrate. The driver circuitry is responsive to input electrical signal for generating an output pressure signal. A conductive interconnect structure formed in the monolithic semiconductor substrate to electrically connects the pressure sensing device to the driver circuitry such that electrical pressure signals developed by the pressure sensing device are provided as input electrical signals to the driver circuitry.
申请公布号 US7373833(B2) 申请公布日期 2008.05.20
申请号 US20060501318 申请日期 2006.08.09
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 HOPPER PETER J.;MIAN MICHAEL;MCGINTY JAMES;DRURY ROBERT
分类号 G01L9/00 主分类号 G01L9/00
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