发明名称 |
Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer |
摘要 |
A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.
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申请公布号 |
US7375367(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20040974348 |
申请日期 |
2004.10.27 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
HOOPER STEWART;BOUSQUET VALERIE;JOHNSON KATHERINE L.;HEFFERNAN JONATHAN |
分类号 |
H01L29/06;H01L33/00;H01S5/02;H01S5/34;H01S5/343 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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