发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
To provide a penetration electrode having high quality. A method of manufacturing a semiconductor device includes the following steps: (a) forming a concave part from a first face of a semiconductor substrate in which an integrated circuit is formed; (b) providing a resin layer at least on the bottom face of the concave part; (c) forming a conductive part to an inner side of the resin layer of the concave part; (d) disposing the resin layer from a second face opposite to the first face of the semiconductor substrate by wet etching; and (e) exposing the conductive part from the second face of the semiconductor substrate.
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申请公布号 |
US7375007(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20050030165 |
申请日期 |
2005.01.07 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
FUKAZAWA MOTOHIKO |
分类号 |
H01L21/30;H01L23/52;H01L21/3205;H01L21/44;H01L21/768;H01L23/31;H01L23/48;H01L23/522;H01L25/065;H01L25/07;H01L25/18;H01L29/22 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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