发明名称 Manufacturing method of semiconductor device and manufacturing method of lead frame
摘要 Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.
申请公布号 US7374973(B2) 申请公布日期 2008.05.20
申请号 US20050181929 申请日期 2005.07.15
申请人 RENESAS TECHNOLOGY CORP. 发明人 ITO FUJIO;SUZUKI HIROMICHI;KAMEOKA AKIHIKO;KUSUKAWA JUNPEI;TAKEZAWA YOSHITAKA
分类号 H01L21/00 主分类号 H01L21/00
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