发明名称 Semiconductor memory device and data read and write method of the same
摘要 A semiconductor memory device includes a memory cell array to store data; a data input portion to output data to the memory cell array in response to a write control signal; a data output portion to output data from the memory cell array in response to a read control signal; a data I/O gate to transmit data outputted from the data input portion to the memory cell array in response to the write control signal, and transmitting data outputted from the memory cell array to the data output portion in response to the read control signal; and a data I/O controller to generate the read control signal and the write control signal having a smaller minimum cycle time than a minimum cycle time of the read control signal. The semiconductor memory device has an improved operation performance compared to one having a low operation frequency within an operable frequency range.
申请公布号 US7376041(B2) 申请公布日期 2008.05.20
申请号 US20040024272 申请日期 2004.12.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG SEONG-JIN
分类号 G11C7/00;G11C11/407;G11C5/00;G11C7/10;G11C7/22;G11C11/40;G11C11/409 主分类号 G11C7/00
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