发明名称 Memory device capable of detecting its failure
摘要 A memory device capable of detecting its failure, the memory device includes a data input section for receiving data applied from an external part of the memory device; a latch section for receiving and storing therein the data which have passed through the data input section; memory cell arrays for storing therein the data which have passed through the data input section; and a data compressor for determining whether or not the data stored in the latch section and the data stored in the memory cell arrays are identical to each other.
申请公布号 US7376889(B2) 申请公布日期 2008.05.20
申请号 US20050122714 申请日期 2005.05.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHA JAE HOON;LEE GEUN IL
分类号 G06F11/00 主分类号 G06F11/00
代理机构 代理人
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