发明名称 |
Method to monitor critical dimension of IC interconnect |
摘要 |
An example method of monitoring and measuring the line width of interconnects comprising the following steps. First, we measure an I-V profile of a sample interconnect structure to obtain a sample I-V profile. The I-V profile is comprised of leakage current measurements at two or more voltages. The sample interconnect structure is comprised of spaced lines having a line spacing. Next we compare the sample I-V profile with a reference I-V profile at a reference line spacing to determine if sample interconnect structure is not defective. If the sample I-V profile is similar to the reference I-V profile, then leakage currents for the sample interconnect structure are derived from the I-V profiles at a selected voltages. Then we calculate the line spacing of the sample interconnect structure using the sample I-V profile.
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申请公布号 |
US7376920(B2) |
申请公布日期 |
2008.05.20 |
申请号 |
US20060398980 |
申请日期 |
2006.04.06 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
QIAN HUA;CHUNG CHING THIAM |
分类号 |
G06F9/45;G01R13/00;G01R27/00;G01R31/02;G01R31/08;G06F17/50 |
主分类号 |
G06F9/45 |
代理机构 |
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