| 摘要 |
Disclosed are a composition for an organic bottom anti-reflective coating able to improve the uniformity of a photoresist pattern with respect to an ultra-fine pattern formation process among processes for manufacturing semiconductor device, which prevents scattered reflection from the bottom film layer and eliminating the standing wave effect due to alteration of the thickness of the photoresist film itself resulting in increase of uniformity of the photoresist pattern. The composition for organic bottom anti-reflective coating is able to reduce amount of polyvinylphenol by introducing a specific light absorbent agent having an etching velocity higher than of the polyvinylphenol, thus notably improving the etching velocity for the organic anti-reflective coating by about 1.5 times, so that and the present composition prevents over-etching of the photoresist to make it possible to conduct a smooth etching process for a layer to be etched.
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