发明名称 SUBSTRATE PROCESSING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD AND PROGRAM RECORDING MEDIUM
摘要 A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
申请公布号 KR100830736(B1) 申请公布日期 2008.05.20
申请号 KR20060013738 申请日期 2006.02.13
申请人 发明人
分类号 H01L21/31 主分类号 H01L21/31
代理机构 代理人
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