METHOD OF FORMING NMOS GATE ELECTRODE

摘要

A method for forming an NMOS gate electrode is provided to prevent deterioration of speed characteristics of a device by preventing damage of an upper sidewall of a polysilicon gate electrode. A gate insulating layer(12) is formed on a semiconductor substrate(10) including an NMOS region. An NMOS gate polysilicon layer(21) doped with an n type impurity is formed on the gate insulating layer of the NMOS region. A gate hard mask pattern is formed on the NMOS gate polysilicon layer. An NMOS gate polysilicon pattern is formed by etching the NMOS gate polysilicon layer. The substrate including the NMOS gate polysilicon pattern is processed by performing an O2 or O3 process, in order to oxidize a surface of the NMOS gate polysilicon pattern. The gate hard mask pattern is removed.