| 摘要 |
In a plasma processing apparatus for conducting plasma process on a semiconductor wafer (5), a lower electrode (3) provided with an electrode member (46) is disposed in a bottom part (40c) of a chamber container (40) which is a main body of a vacuum chamber (2), and an upper electrode (4) provided with a projected face which is projected downward from its lower face inward of its outer edge portion (51a) lower than a lower face of the outer edge portion is disposed above the lower electrode (3) so as to move up and down. The upper electrode (4) is moved downward toward the lower electrode (3) to bring the outer edge portion (51a) into contact with an annular hermetically sealing face (4Od) which is formed at an intermediate level (HL) in a side wall part (40a) of the chamber container (40), whereby a hermetically sealed process space (2a) is formed between the lower electrode (3) and the upper electrode (4). Accordingly, a normal pressure space (2b) is formed above the upper electrode (4), and occurrence of abnormal discharge will be prevented, thus enabling stabilized plasma process to be efficiently performed. prevented, thus enabling stabilized plasma process to be efficiently performed.
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