METHOD OF MANUFACTURING VERTICAL LIGHT EMITTING DEVICE

摘要

A method for manufacturing a vertical light emitting element is provided to form reliably and easily a passivation layer by performing a passivation deposition process in a forwardly inclined state of a sidewall of a light emitting layer. A light emitting layer(120) including an n type semiconductor layer(122), an active layer(123), and a p type semiconductor layer(124) is formed on a substrate. A first trench is formed on the light emitting layer. A passivation layer(130) is formed on the light emitting layer. A p type electrode(140) is formed on the p type semiconductor layer of the light emitting layer. A metal supporting layer(150) is formed on the passivation layer and the p type electrode. The substrate is removed. The remaining part of the light emitting layer is removed by etching the exposed surface of the light emitting layer. A p type electrode(160) is formed on the n type semiconductor layer. The light emitting layer is divided into light emitting device units by cutting the metal supporting layer.