| 摘要 |
A semiconductor device and a manufacturing method of the same are provided to reduce defects due to a thermal expansion difference between a metal and a polysilicon by making a thin polysilicon pattern into silicide. A gate oxide layer, a gate polysilicon layer, and a capping oxide layer are formed on a semiconductor substrate(10). A photoresist pattern is formed on the capping oxide layer. The capping oxide layer, the gate polysilicon layer, and the gate oxide layer are sequentially etched by using the photoresist pattern as an etch mask. Ions are implanted onto the semiconductor substrate by using the photoresist pattern as an ion implantation mask, in order to form a spacer(50). A source/drain region(62) is formed by performing a heat diffusion process. The capping oxide is removed. The ions are implanted onto the gate polysilicon layer. A metal is deposited on the gate polysilicon layer. The polysilicon layer is silicidized by a thermal process.
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