METHOD OF MANUFACTURING A THIN LAYER, METHODS OF MANUFACTURING GATE STRUCTURE AND CAPACITOR USING THE SAME

摘要

A method of manufacturing a thin film comprising a metal oxide which is crystallized in the deposition step by using a noble alkoxide-based organometallic precursor, and which has excellent capacitance and good leakage current characteristics is provided, a method of manufacturing a gate structure comprising a gate insulating film made of the metal oxide is provided, and a method of manufacturing a capacitor comprising a dielectric film made of the metal oxide is provided. A method of manufacturing a thin film containing metal-aluminum-oxide comprises the steps of: providing on an upper part of a substrate(10) an organometallic precursor having a vapor pressure of 0.5 to 6 torr at a temperature of 65 to 95 deg.C as a first reaction material, the organometallic precursor being represented by the formula, where A is an aromatic ring compound or a hetero ring compound with at least 4 carbon atoms, M is titanium(Ti), zirconium(Zr) or hafnium(Hf), and the R is an alkyl group with 1 to 5 carbon atoms; chemically adsorbing a first part(12) of the first reaction material onto the substrate, and physically adsorbing a second part(14) of the first reaction material onto the substrate; introducing an oxidizer comprising oxygen onto an upper part of the substrate; chemically reacting the first part of the first reaction material with the oxidizer to form a first solid material containing metal-oxide on the substrate; introducing an organoaluminum precursor as a second reaction material onto an upper part of the first solid material; chemically adsorbing a first part of the second reaction material onto the first solid material, and physically adsorbing a second part of the second reaction material onto the first solid material; introducing an oxidizer onto an upper part of the first solid material; and chemically reacting the first part of the second reaction material with the oxidizer to form a second solid material containing aluminum-oxide on the first solid material.