| 摘要 |
A method for growing a silicon single crystal by using CUSP magnetic field is provided to increase oxygen concentration within a silicon single crystal in the latter stage of growth by maintaining the pressure within a silicon single crystal growing furnace in the latter stage of growth more lowly than the pressure in earlier state thereof. A method for growing a silicon single crystal by using CUSP magnetic field includes: starting the growth of a silicon single crystal by using a silicon single crystal growth furnace(S1); reducing the pressure inside the silicon single crystal growth furnace to a value less than that in earlier stage of the growth, for example less than 30 torr, when latter stage of the growth comes(S2); and continuously growing the silicon single crystal as increasing oxygen concentration in the silicon single crystal in the latter stage(S3), thereby reducing the deviation of axial-direction oxygen concentration .
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