| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve such a problem that the quality of sensed image may be greatly deteriorated or the abnormality of an image sensing signal may be caused because light leaking from a wiring layer arranged above the ring shaped insulation gate type transistor enters an electric charge storage region due to scattering, diffraction or the like in a solid-state imaging element for taking out electric charge accumulated in the electric charge storage area of a semiconductor substrate immediately under the ring shaped insulation gate type transistor. <P>SOLUTION: A ring shaped gate electrode 15 has a double-layer structure wherein a polysilicon layer 15a and a metallic silicide 15b such as W silicide, Ti silicide, Co silicide, Ni silicide, etc. are provided on a gate oxide film 14. The metallic silicide 15b does not permit the transmission of light, so that light shielding effect is given to the ring shaped gate electrode 15. Thus, the ring shaped gate electrode 15 can prevent the entry of light that leaks from a wiring layer 20 due to scattering, diffraction or the like, into a source adjacent region 17 as an electric charge storage region. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
